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| NEC's MEDIUM POWER NPN NE678M04 SILICON HIGH FREQUENCY TRANSISTOR FEATURES * * * * HIGH GAIN BANDWIDTH: fT = 12 GHz HIGH OUTPUT POWER: P-1dB = 18 dBm at 1.8 GHz HIGH LINEAR GAIN: GL = 13 dB at 1.8 GHz NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 2 +0.30 2.050.1 1.250.1 3 2.00.1 R55 1.25 0.650.65 0.650.65 DESCRIPTION NEC's NE678M04 is fabricated using NEC's HFT3 wafer process. With a transition frequency of 12 GHz, the NE678M04 is usable in applications from 100 MHz to 3 GHz. The NE678M04 provides P1dB of 18 dBm, even with low voltage and low current, making this device an excellent choice for the driver stage for mobile or fixed wireless applications. The NE678M04 is housed in NEC's new low profile/flat lead style "M04" package 1 +0.30-0.05 (leads 1, 3 and ,4) 0.590.05 +0.11-0.05 MAX 100 100 75 dBm dB dBm dB % dB GHz pF 8.0 120 18.0 13.0 13.5 10.5 55 1.7 12.0 0.42 0.7 2.5 150 +0.1 PIN CONNECTIONS 1. Emitter 2. Collector 3. Emitter 4. Base NE678M04 M04 2SC5753 UNITS nA nA MIN TYP +0.01 ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER PACKAGE OUTLINE EIAJ3 REGISTRATION NUMBER SYMBOLS ICBO PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 5V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current1 Gain at VCE = 3 V, IC = 30 mA Output Power at 1 dB compression point at VCE = 2.8 V, ICQ = 10 mA, f = 1.8 GHz, Pin = 7 dBm Linear Gain at VCE = 2.8 V, IC = 10 mA, f = 1.8 GHz, Pin = -5 dBm Maximum Available Gain4 at VCE = 3 V, IC = 30 mA, f = 2 GHz Insertion Power Gain at VCE = 3 V, IC = 30 mA, f = 2 GHz Collector Efficiency at VCE = 2.8 V, ICQ = 10 mA, f = 1.8 GHz, Pin = 7 dBm Noise Figure at VCE = 3 V, IC = 7 mA, f = 2 GHz, ZS = Zopt Gain Bandwidth at VCE = 3 V, IC = 30 mA, f = 2 GHz Reverse Transfer Capacitance2 at VCB = 3 V, IC = 0, f = 1 MHz DC IEBO hFE P1dB GL RF MAG |S21E|2 c NF fT Cre Notes: 1. Pulsed measurement, pulse width 350 s, duty cycle 2 %. 2. Collector to Base capacitance measured by capacitance meter(automatic balance bridge method) when emitter pin is connected to the guard pin of capacitance meter. 3. Electronic Industrail Association of Japan. 4. MAG = |S21| |S12| (K K 2- 1 ). California Eastern Laboratories 4 1.30 NE678M04 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) SYMBOLS VCBO VCEO VEBO IC PT TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation2 Junction Temperature Storage Temperature UNITS V V V mA mW C C RATINGS 9.0 6.0 2.0 100 205 150 -65 to +150 ORDERING INFORMATION PART NUMBER NE678M04-T2-A QUANTITY 3k pcs./reel THERMAL RESISTANCE SYMBOLS Rth j-a PARAMETERS Thermal Resistance from Junction to Ambient UNITS C/W RATINGS 600 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Mounted on a 1.08cm2 x 1.0 mm thick glass epoxy PCB. Note: 1. Mounted on a 1.08cm2 x 1.0 mm thick glass epoxy PCB. TYPICAL PERFORMANCE CURVES (TA = 25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Mounted on Glass Epoxy PCB 2 (1.08 cm x 1.0 mm (t) ) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Reverse Transfer Capacitance Cre (pF) 300 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 1 2 3 4 5 6 f= 1 MHz Total Power Dissipation Pout (mW) 250 205 200 150 100 50 0 25 50 75 100 125 150 Ambient Temperature TA (C) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 100 90 700 A 1000 DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = 3 V Collector Current IC (mA) 70 60 50 40 30 20 10 0 2 500 A 400 A 300 A 200 A DC Current Gain (hFE) 80 600 A 100 IB =100 A 4 6 8 10 0.1 1 10 100 Collector to Emitter Voltage VCE (V) Collector Current IC (mA) NE678M04 TYPICAL PERFORMANCE CURVES (TA = 25 C) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 15 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY Insertion Power Gain |S21e|2, (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 35 30 MSG 25 20 15 10 5 0 0.1 |S21e|2 MAG Gain Bandwidth Product fT (GHz) VCE = 3 V f = 2 GHz VCE = 3 V IC = 30 mA 10 5 0 1 10 100 1 10 Collector Current IC (mA) Frequency f (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT Insertion Power Gain |S21e|2, (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2, (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 25 VCE = 3 V f = 1 GHz 25 VCE = 3 V f = 2 GHz MSG MAG 20 20 MSG MAG 15 |S21e|2 15 10 10 |S21e|2 5 5 0 1 10 100 0 1 10 100 Collector Current IC (mA) Collector Current IC (mA) INSERTION POWER GAIN, MAG vs. COLLECTOR CURRENT NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 8 VCE = 3 V f = 2 GHz Insertion Power Gain |S21e|2, (dB) Maximum Available Power Gain MAG (dB) 25 VCE = 3 V f = 2.5 GHz 16 15 MAG Noise Figure NF (dB) 6 12 4 8 10 |S21e|2 5 2 NF 0 4 0 1 10 100 1 10 0 100 Collector Current IC (mA) Collector Current IC (mA) Associated Gain Ga (dB) 20 Ga NE678M04 TYPICAL PERFORMANCE CURVES (TA = 25 C) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 25 VCE = 3.2 V f = 0.9 GHz Icq = 10 mA (RF OFF) 250 Pout 200 GP Output Power Pout (dbm) Power Gain Gp (dB) 20 15 150 10 IC C 100 5 50 0 -10 -5 0 5 10 0 15 Input Power Pin (dBm) Collector Current IC (mA), Collector Efficiency c (%) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 25 VCE = 2.8 V f = 1.8 GHz Icq = 10 mA (RF OFF) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 250 25 250 VCE = 3.2 V f = 1.8 GHz Icq = 10 mA (RF OFF) Collector Current IC (mA), Collector Efficiency c (%) Output Power Pout (dbm) Power Gain Gp (dB) 15 GP 10 C 5 IC 0 -10 -5 0 5 10 150 Output Power Pout (dbm) Power Gain Gp (dB) 20 200 20 200 15 GP 10 C 5 IC 150 100 100 50 50 0 15 0 -10 -5 0 5 10 0 15 Input Power Pin (dBm) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 25 VCE = 3.2 V f = 2.4 GHz Icq = 10 mA (RF OFF) Input Power Pin (dBm) 250 Output Power Pout (dbm) Power Gain Gp (dB) 20 200 15 GP 10 C 5 IC 0 -10 -5 0 5 10 150 100 50 0 15 Input Power Pin (dBm) Collector Current IC (mA), Collector Efficiency c (%) Pout Collector Current IC (mA), Collector Efficiency c (%) Pout Pout NE678M04 TYPICAL SCATTERING PARAMETERS (TA = 25C) j50 j25 j10 0 10 S11 -j10 25 S22 50 100 j100 +90 +135 +45 5 10 15 20 +180 +0 -135 -j25 -j50 -j100 -45 -90 NE678M04 VC = 2 V, IC = 10 mA FREQUENCY GHz 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.500 1.800 1.900 2.000 2.500 3.000 3.500 4.000 4.500 5.000 5.500 6.000 MAG 0.72 0.68 0.65 0.63 0.62 0.60 0.60 0.60 0.60 0.60 0.59 0.59 0.59 0.59 0.59 0.60 0.61 0.63 0.65 0.67 0.69 0.71 S11 ANG -45.97 -81.43 -106.66 -124.06 -136.69 -148.20 -155.78 -161.77 -167.38 -171.69 170.30 161.69 158.90 156.19 142.62 128.82 114.69 101.16 89.04 78.45 68.99 59.90 MAG 23.42 19.17 15.41 12.56 10.53 8.85 7.72 6.86 6.15 5.59 3.81 3.21 3.05 2.90 2.35 1.97 1.69 1.47 1.29 1.15 1.02 0.92 S21 ANG 152.40 132.28 118.19 108.21 100.63 94.98 89.80 85.45 81.38 77.66 61.44 52.84 50.05 47.32 33.99 21.32 9.12 -2.44 -13.44 -23.86 -33.79 -43.00 MAG 0.02 0.04 0.05 0.05 0.06 0.06 0.06 0.06 0.07 0.07 0.08 0.09 0.09 0.09 0.11 0.13 0.14 0.16 0.18 0.19 0.21 0.23 S12 ANG 65.62 52.02 42.17 37.11 33.66 32.53 31.81 31.70 31.29 31.31 33.17 33.52 33.69 33.45 32.55 29.86 26.40 21.89 16.66 10.92 4.77 -1.43 MAG 0.90 0.74 0.61 0.52 0.46 0.38 0.36 0.34 0.33 0.32 0.31 0.32 0.32 0.33 0.36 0.39 0.43 0.47 0.50 0.53 0.57 0.60 S22 ANG -29.51 -51.31 -66.86 -77.84 -86.27 -92.24 -98.70 -102.52 -106.64 -110.16 -123.84 -130.08 -131.91 -133.96 -142.01 -149.47 -156.17 -163.41 -171.39 179.62 170.14 160.66 0.10 0.18 0.26 0.34 0.42 0.56 0.62 0.68 0.74 0.79 1.00 1.07 1.10 1.11 1.14 1.15 1.12 1.07 1.03 0.98 0.94 0.92 K MAG1 (dB) 29.97 26.71 24.93 23.61 22.62 21.75 21.00 20.32 19.72 19.17 16.81 13.98 13.41 12.93 11.02 9.63 8.62 7.95 7.59 7.69 6.86 6.09 Note: 1. Gain Calculations: MAG = |S21| |S12| (K - K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE678M04 TYPICAL SCATTERING PARAMETERS (TA = 25C) j50 j25 j10 0 10 25 S11 50 100 S22 10 20 30 +180 +0 +90 j100 +135 +45 -j10 -135 -45 -90 -j25 -j50 -j100 NE678M04 VC = 3 V, IC = 30 mA FREQUENCY GHz 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.500 1.800 1.900 2.000 2.500 3.000 3.500 4.000 4.500 5.000 5.500 6.000 MAG 0.52 0.55 0.56 0.56 0.56 0.56 0.57 0.57 0.57 0.57 0.57 0.57 0.57 0.57 0.57 0.57 0.58 0.60 0.62 0.64 0.65 0.67 S11 ANG -74.30 -114.70 -136.33 -149.34 -158.35 -167.02 -172.39 -176.68 179.14 176.07 161.30 153.82 151.23 148.83 136.19 123.25 109.78 96.93 85.43 75.45 66.54 57.90 MAG 39.85 28.29 20.98 16.42 13.45 11.22 9.70 8.57 7.66 6.93 4.70 3.96 3.76 3.58 2.90 2.44 2.10 1.84 1.63 1.46 1.32 1.19 S21 ANG 141.89 120.64 108.33 100.26 94.25 90.08 85.86 82.27 78.87 75.71 61.65 53.96 51.43 48.96 36.74 24.91 13.41 2.30 -8.43 -18.79 -28.80 -38.45 MAG 0.02 0.03 0.03 0.03 0.04 0.04 0.04 0.05 0.05 0.06 0.08 0.09 0.09 0.10 0.12 0.14 0.16 0.18 0.19 0.21 0.22 0.24 S12 ANG 63.14 50.10 45.90 45.26 45.86 47.13 48.18 49.01 49.82 50.22 49.69 48.26 47.59 46.86 42.26 36.84 30.78 24.27 17.67 11.05 4.47 -2.21 MAG 0.79 0.58 0.46 0.40 0.36 0.30 0.28 0.27 0.27 0.26 0.27 0.27 0.28 0.28 0.31 0.34 0.37 0.40 0.43 0.47 0.50 0.53 S22 ANG -43.24 -69.59 -86.51 -97.94 -106.44 -115.48 -121.83 -125.22 -128.89 -131.89 -142.80 -147.21 -148.33 -149.67 -154.80 -159.87 -164.45 -170.06 -176.72 175.39 166.91 158.44 0.22 0.37 0.49 0.61 0.69 0.83 0.88 0.92 0.96 0.98 1.07 1.09 1.09 1.09 1.09 1.08 1.06 1.04 1.01 0.98 0.95 0.93 K MAG1 (dB) 33.48 30.30 28.27 26.78 25.46 24.40 23.43 22.51 21.72 20.95 16.35 14.70 14.25 13.81 12.03 10.71 9.71 9.03 8.78 8.46 7.72 7.05 Note: 1. Gain Calculations: MAG = |S21| |S12| (K - K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE678M04 TYPICAL SCATTERING PARAMETERS (TA = 25C) j50 j25 j10 0 10 S11 25 50 100 j100 +90 +135 +45 10 20 30 40 +180 +0 -j10 -j25 -j50 S22 -135 -j100 -45 -90 NE678M04 VC = 5 V, IC = 70 mA FREQUENCY GHz 0.100 0.200 0.300 0.400 0.500 0.600 0.700 0.800 0.900 1.000 1.500 1.800 1.900 2.000 2.500 3.000 3.500 4.000 4.500 5.000 5.500 6.000 MAG 0.46 0.51 0.53 0.54 0.55 0.55 0.56 0.56 0.56 0.56 0.56 0.55 0.55 0.55 0.55 0.56 0.57 0.58 0.60 0.62 0.64 0.65 S11 ANG -92.27 -129.65 -147.72 -158.40 -165.77 -173.25 -177.75 178.53 174.86 172.16 158.57 151.40 148.96 146.64 134.28 121.53 108.26 95.62 84.34 74.53 65.76 57.22 MAG 47.62 31.64 22.84 17.67 14.38 11.98 10.33 9.12 8.14 7.36 4.98 4.19 3.98 3.79 3.07 2.58 2.22 1.95 1.73 1.55 1.40 1.27 S21 ANG 136.35 115.69 104.50 97.25 91.83 88.17 84.28 80.93 77.76 74.77 61.30 53.86 51.41 49.00 37.07 25.46 14.13 3.18 -7.49 -17.79 -27.80 -37.47 MAG 0.01 0.02 0.03 0.03 0.03 0.04 0.04 0.04 0.05 0.05 0.08 0.09 0.09 0.10 0.12 0.14 0.16 0.18 0.20 0.21 0.22 0.24 S12 ANG 61.08 51.85 50.27 51.38 53.36 54.92 55.88 56.52 56.38 57.10 55.00 52.53 51.60 50.56 44.90 38.56 32.10 25.40 18.42 11.57 4.84 -1.99 MAG 0.69 0.49 0.39 0.34 0.31 0.26 0.25 0.25 0.24 0.24 0.25 0.26 0.26 0.27 0.29 0.32 0.36 0.39 0.42 0.45 0.48 0.51 S22 ANG -50.06 -77.41 -94.24 -105.50 -113.55 -123.64 -129.49 -132.28 -135.41 -138.20 -147.24 -150.84 -151.75 -152.82 -157.03 -161.31 -165.52 -170.85 -177.21 175.01 166.70 158.43 0.35 0.51 0.65 0.76 0.84 0.94 0.98 1.00 1.02 1.04 1.08 1.09 1.09 1.09 1.09 1.07 1.06 1.03 1.01 0.98 0.96 0.94 K MAG1 (dB) 35.14 31.73 29.60 27.89 26.43 25.20 24.08 22.69 21.26 20.18 16.43 14.89 14.44 14.02 12.29 10.96 9.97 9.29 9.02 8.67 7.95 7.29 Note: 1. Gain Calculations: MAG = |S21| |S12| (K - K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 DATA SUBJECT TO CHANGE WITHOUT NOTICE Internet: http://WWW.CEL.COM 02/07/2002 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix -A indicates that the device is Pb-free. The -AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL's understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall CEL's liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. See CEL Terms and Conditions for additional clarification of warranties and liability. |
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